15
2013 - 3. Hudait MK, Zhu Y, Maurya D, Priya S, Patra PK, Ma AWK, Aphale A, Macwan I. Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy. J Appl Phys. 113(13):134311.
Found on CV