Robert Karlicek

"Effect of Multispectral Pulsed Light-Emitting Diodes on the Growth, Photosynthetic and Antioxidant Response of Baby Leaf Lettuce (Lactuca sativa L.)," J. Miliauskien, R. F. Karlicek Jr., E.Kolmos, Plants 2021, 10, 762, https://doi.org/10.3390/plants10040762

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"Scalable, effective, and rapid decontamination of SARS CoV 2 contaminated N95 respirators using germicidal ultraviolet C (UVC) irradiation device," R. Rathnasinghe, R. F. Karlicek Jr., M. Schotsaert, M. Koffas, B. L. Arduini, S. Jangra, B. Wang, J. L. Davis, M. Alnaggar, A. Costa, R. Vincent, A. Garcia-Sastre, D. Vashishth, P. Balchandani, Scientific Reports (2021) 11:19970 https://doi.org/10.1038/s41598-021-99431-5

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"RGB Color Sensors for Occupant Detection: An Alternative to PIR Sensors," T. -K. Woodstock, R. F. Karlicek, IEEE Sensors Journal, 20(20), pp. 12364-12373, 2020, https://doi.org/10.1109/JSEN.2020.3000170

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"Smart Lighting Clinical Testbed Pilot Study on Circadian Phase Advancement," J. D. Gleason, M. Oishi, M. Simkulet, A. Tuzikas, J. P. Hanifin, G. C. Brainard, S. R. J. Brueck, R. F. Karlicek, L. K. Brown, in IEEE Journal of Translational Engineering in Health and Medicine, vol. 7, pp. 1-10, 2019, Art no. 3200110, doi: 10.1109/JTEHM.2019.2937957

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"The Impact of Dynamic Changes in Light Spectral Power Distribution on Cognitive Performance and Wellbeing," L. E. Hartstein, A. Tuzikas, R. F. Karlicek, Jr., Leukos (2019), doi.org/10.1080/15502724.2019.1693896

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"Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs Using Selective Epi Removal," Z. Guo; C. Hitchcock; C. Wetzel, R. F. Karlicek, G. Piao, Y. Yano, S. Koseki, T. Tabuchi, K. Matsumoto, M. Bulsara, T. Paul Chow, IEEE Electron Device Letters 40 (11), 2019, doi:10.1109/LED.2019.2943911

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"A Monolithically Integrated Time-of-Flight Sensor with Large Area Silicon Avalanche Photodiode," A. Chowdhury, R. F. Karlicek and M. M. Hella, 2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS), 2019, pp. 1203-1206, doi: 10.1109/MWSCAS.2019.8884934.

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"3D model for rectangular electrowetting lens structures," Z. Zhang, C, Hitchcock, R. F. Karlicek, Jr., Applied Optics 55 (35), 2016

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"High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal", Zongda Li, J. Waldron, Sauvik Chowdhury, L. Zhao,T. Detchprohm, C. Wetzel, R.F. Karlicek, and T.P. Chow, Phys. Stat. Sol. A 01/2015 https://doi.org/10.1002/pssa.201431660

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"Journal of Solid State Lighting," R. R. Karlicek, Jr., R. Ma, C-C. Sun, G. Zissis, J. Solid State Lighting 2014:1, https://doi.org/10.1186/2196-1107-1-1

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"Solid-State Lighting: Toward Smart and Ultra-efficient Solid-State Lighting", J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, R. F. Karlicek Jr., Advanced Optical Materials 2(9) 2014, p. 803

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(2013), A. Mao and R. F. Karlicek, Jr.

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"Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor sapphire substrate," App. Phys. Lett. 102 (2013) 192107, Z. Li, J. Waldron, T., Detchprohm, C. Wetzel, R. F. Karlicek, T. P. Chow 48. "Nanopatterning using a simple bi-layer liftoff process for the fabrication of a photonic crystal nanostructure," Nanotechnology 24 (2013) 085302, A. Mao, C. D. Schaper, R. F. Karlicek, Jr.

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"Future Directions in LED Applications" in Thermal Management for LED Applications, C. Lasance and A. Poppe, Eds., Springer 2013, pgs. 519 - 542

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"Emerging System Level Applications for LED Technology" in III-Nitride Based Light Emitting Diodes and Applications, T-Y Seong, J. Han, H. Amano, and H. Morkoc, Eds., Springer 2013, pgs.

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(with Steve DenBaars and Shuji Nakamura), February, 2001

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"Thermally Stable ZrN/Zr/n-GaN Ohmic Contacts", Electrochem. and Sol. State Letters, 2, 151(1999)

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"Growth of InGaN/GaN Multiple Quantum-Well Blue Light-Emitting Diodes on Silicon by Metalorganic Vapor Phase Epitaxy," Appl. Phys. Lett. 75 (1999): 1494-96.

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"Time-resolved Photoluminescence Measurements of Quantum Dots in InGaN Multiple Quantum Wells and Light Emitting Diodes", J. Appl. Phys., 86, 1114 (1999)

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"Time-resolved Spectroscopy of InGaN/GaN Multiple Quantum Wells at Room Temperature", Appl. Phys. Letters, 73, 815 (1998)

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"Phase Separation in InGaN/GaN Multiple Quantum Wells and its Relation to Brightness in Blue and Green LEDs", J. Crystal Growth, 195, 397 (1998)

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"Electrical and Structural Analysis of High-dose Si Implantation in GaN", Appl. Phys. Letters, 70, 2729 (1997)

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"Structural Properties of GaN Grown by MOVPE Turbodisc Mass Production Reactors", J. Crystal Growth, 174, 647 (1997)

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"Inductively Coupled Plasma Etching of GaN" Appl. Phys. Letters, 69, 1119 (1996)

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"Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures", Appl. Phys. Letters, 69, 1879 (1996)

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"Competition between Bandgap and Yellow Luminescence in GaN and Its Relevance for Optoelectronic Devices", J. Appl. Phys., 80, 4615 (1996)

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"Fe Incorporation and Precipitation in Semi-Insulating Fe-Doped InP Grown by MOCVD", J. Electrochem. Soc.,141, 242 (1994)

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"Fabrication of InGaAsP/InP Buried Heterostructure Laser Using Reactive Ion Etching and Metalorganic Chemical Vapor Deposition", Photonics Technology Letters, 5, 279 (1993)

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"Planar Regrowth of InP and InGaAs around Reactive Ion Etched Mesas using Atmospheric Pressure Metalorganic Vapor Phase Epitaxy", Appl. Phys. Letters, 63,234 (1993)

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"Real-time Monitoring and Analysis of Chemical Wet Etching of III-V Compound Semiconductors" J. Electrochem. Soc., 140, 703 (1993)

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"A Modified MOCVD Chemistry for Improved Selective Area Regrowth", J. Cryst. Growth, 131,204 (1993)

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"Metallic Tungsten Phosphide Films Formed by Spin Coating Polyperoxytungstic Acid on InP", App. Phys. Letters., 59, 2832 (1991)

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"Regrowth of Semi-Insulating InP around Etched Mesas Using Hydride Vapor Phase Epitaxy'', J. Electrochem. Soc., 137, 2639 (1990)

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"The Fabrication and Performance of 1.3 Micron DFB EMBH Lasers with Coplanar Contacts'', Fiber and Integrated Optics, 9, 367 (1990)

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"Wide-Bandwidth and High Power InGaAsP Distributed Feedback Lasers'', J. Appl. Phys., 66, 4640 (1989)

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"Performance Characteristics of Buried Facet Quarter-Wave Shifted Distributed Feedback Lasers.'', Electronics Lett., 25, 1045 (1989)

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"GaInAsP Dual Wavelength Lasers'', Electronics Lett., 24, 1565 (1988)

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"Growth Methods for Lightwave Devices", in Optical Fiber Telecommunications II, Chapter 16, (S.E. Miller and I. P. Kaminow, Eds.) Academic Press, 1988

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"The Effect of PH3 Pyrolysis on the Morphology and Growth Rate of InP Grown by Hydride Vapor Phase Epitaxy'', J. Electrochem. Soc., 134, 470 (1987)

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"UV absorption spectroscopy for monitoring hydride vapor-phase epitaxy of InGaAsP alloys"J. Appl. Phys. 60, 794 (1986)

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"Gallium Contamination of InP Epitaxial Layers in InP/InGaAsP Multilayer Structures Grown by Hydride Transport Vapor Phase Epitaxy'', J. Electrochem. Soc., 132, 1187 (1985)

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"Thermal Decomposition of Metal Organic Compounds Used in the MOCVD of InP'', J. Crystal Growth, 68, 123 (1984)

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"A 31P NMR Study of InP, GaP, and InGaP'', J. Phys. Chem. Solids, 45, 389 (1984)

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"Channeled-substrate Buried Heterostructure InGaAsP/InP Lasers with Vapor Phase Epitaxial Base Structure and Liquid Phase Epitaxial Base Structure and Liquid Phase Epitaxial Regrowth'', J. Appl. Phys., 56, 710 (1984)

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"TEM Observations of Laser Induced Pt and Au Deposition on InP'', J. Electrochem. Soc., 130, 1473 (1983)

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"Laser Induced Metal Deposition on InP'', J. Appl. Phys., 53, 1084 (1982).

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"Anomalous Spectral Density Functions in LaNi5 Hydride'', with Mater. Res. Soc. Symp. Proc. 1981 3 (Nucl. Electron Reson. Spectrosc. Appl. Mater. Sci.), pg.331

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"A Modified Pulsed Field Gradient Technique for the Measurement of Diffusion Coefficients in Powdered Samples'', J. Magnetic Reson., 37, 75 (1980)

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"Mechanism of H2 Absorption by LaNi5", J. Phys. Chem., 83, 1708 (1979)

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"H2 Diffusion in LaNi5 Hydride'', Solid State Commun., 31, 163 (1979)

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"A Pulsed Broadband NMR Spectrometer'', J. Magnetic Reson., 32, 199 (1978)

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"A Pulsed NMR Study of Hydrogen Diffusion in LaNi5 Hydride'', J. Less-Comm Met., 73, 219

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"Development of Laser Diagnostic Probes for CVD of InP/InGaAsP Epitaxial Layers'', J. Appl.

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"Excimer Laser Induced Deposition of InP and Indium Oxide Films'', Appl. Phys. Lett., 44, 951

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"Remote Optical Monitoring of Vapor Phase Epitaxial Reactors'', J. Crystal Growth, 73, 364

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"High Speed Distributed Feedback Lasers Grown by Hydride Vapor Phase Epitaxy'', Appl. Phys.

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"The Growth of Semi-insulating InP by Hydride Vapor Phase Epitaxy'', J. Crystal Growth, 91, 33

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"Semi-insulating Properties of Fe-doped InP Grown by Hydride Vapor Phase Epitaxy'', J. Appl.

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"Highly Stable W/p-InGaAs Ohmic Contacts Formed by Rapid Thermal Processing'', Appl. Phys.

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"Microcavity Effects in GaN Epitaxial Films and Ag/GaN/Sapphire Microcavities", Appl. Phys.

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"Analysis of a Thin AlN Interfacial Layer in Ti/Al and Pd/Al Ohmic Contacts to n-Type GaN", Appl.

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"Surface patterning of nonscattering phosphors for light extraction", Optics Letters 38(15)

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"A comparison of the effects of correlated colour temperature and gender on cognitive task performance," L.E. Hartstein, M.T. Durniak, R.F. Karlicek, Jr., N.E. Berthier, Lighting Res. Technol.

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"Integrable Quasivertical GaN U-Shaped Trench-Gate Metal-Oxide-Semiconductor Field-Effect Transistors for Power and Optoelectronic Integrated Circuits," Z. Guo, C. Hitchcock, R. F. Karlicek, Jr., G. Piao, Y. Yano, S. Koseki, P. T Chow, Physica Status Solidi (a). doi:10.1002/pssa.201900615

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"Solid-State Lighting: Toward Smart and Ultra-efficient Solid-State Lighting", J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, R. F. Karlicek Jr. in "Photonics, Volume 3, Photonics Technology and Instrumentation", D. L. Andrews (ed.) ISBN: 978-1-118-22554-7 (Wiley)

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